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MMBT591A
PNP Silicon Epitaxial Planar Transistor
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Pulse Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -ICM Ptot TJ TS Value 40 40 5 1 2 200 150 - 65 to + 150 Unit V V V A A mW
O
C C
O
Characteristics at Ta = 25 OC
Parameter DC Current Gain at -VCE = 5 V, -IC = 1 mA at -VCE = 5 V, -IC = 100 mA at -VCE = 5 V, -IC = 500 mA at -VCE = 5 V, -IC = 1 A Collector Cutoff Current at -VCB = 30 V Collector Cutoff Current at -VCE = 30 V Emitter Cutoff Current at -VEB = 5 V Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 1 mA at -IC = 500 mA, -IB = 20 mA at -IC = 1 A, -IB = 100 mA Base Emitter Saturation Voltage at -IC = 1 A, -IB = 50 mA Base Emitter Voltage at -IC = 1 A, -VCE = 5 V Collector Capacitance at -VCB = 10 V, f = 1 MHz Gain Bandwidth Product at -VCE = 10 V, -IC = 50 mA, f = 100 MHz Symbol hFE hFE hFE hFE -ICBO -ICEO -IEBO Min. 300 300 250 160 150 Max. 800 0.1 0.1 0.1 0.2 0.35 0.5 1.1 1 12 Unit A A A
-VCEsat
V
-VBEsat -VBE CC fT
V V pF MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 21/09/2006
MMBT591A
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 21/09/2006

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